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氧化鉿基材之高遷移率通道
鐵電鰭式場效電晶體與鐵電環繞式閘極電晶體之實作與三維模擬研究

計畫簡介

氧化鉿基材之高遷移率通道鐵電鰭式場效電晶體與鐵電環繞式閘極電晶體之實作與三維模擬研究。其具 (1)高開關電流比(ION/IOFF)，(2)較低的off-state漏電流，(3)較高的載子遷移率，擁有高的on-state 電流，(4)SS能夠低於物理極限(60mV/dec)，(5)HZO能整合至現今CMOS元件製程。　

研究項目適用領域

高遷移率通道材料低功耗高效能邏輯元件。

主要具體貢獻

1. 對於SiGe ultra-thin FinFET和一般Si FinFET進行分析，SiGe UT-FinFET有較高的汲極電流、載子遷移率以及較低的

    閘極漏電流。

2. 將HZO應用於Ge通道材料FE GAAFET，討論其IM下特性，且首次對於JL模式之汲極電流在次臨界區域導通機制進行

    討論。

3. 利用Ge通道，形成具鐵電性的Ge摻雜HfO2的薄膜，並將其應用在環繞式閘極的奈米線結構。

計畫論文發表

1. Chong-Jhe Sun, Meng-Ju Tsai, Siao-Cheng Yan, Tzu-Ming Chu, Chieng-Chung Hsu, Chun-Lin Chu, Guang-Li

    Luo, And Yung-Chun Wu*, “Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET

    With Low Off State Leakage and High ION/IOFF Ratio”, IEEE Journal of the Electron Devices Society, vol. 8,

    pp. 1016-1020, 2020.

2. Chong-Jhe Sun, Siao-Cheng Yan, Yi-Wen Lin, Meng-Ju Tsai, Yu-Chen Tsai, Chuan Pu Chou, Fu-Ju Hou,

    Guang-Li Luo, and Yung-Chun Wu*, “Comprehensive Study of Inversion and Junctionless Ge Nanowire

    Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative

    Capacitance”, ECS Journal of Solid State Science and Technology, Vol. 10, Number 6, pp. 065002, 2021.

3. Yi-Wen Lin, Chong-Jhe Sun, Hao-Hsiang Chang, Yu-Hsien Huang, Tung-Yuan Yu,  Yung-Chun Wu, and  Fu-Ju

    Hou*, “Self-induced ferroelectric 2-nm-thick Ge-doped HfO2 thin film applied to Ge nanowire ferroelectric

    gate-all-around field-effect transistor ”, Applied Physics Letters, 117, 262109, 2020.

(a) EDS-mapping of SiGe fin. (b)TEM of SiGe fin with Wfin = 5 nm. (c) Effective mobility to inversion carrier density of Si FinFET and Si0.8Ge0.2 UT-FinFET with HZO as gate oxide.  (d) ION and IOFF comparisons between Si FinFET and SiGe UT-FinFET .

(A). 2021中華民國專利獲證：具超薄結晶性氧化鋯之閘極介電層的鐵　

       電電晶體裝置

圖片1.png
圖片2.png

(B). SiGe 通道超薄鐵電HZO鰭式場效電晶體

圖片4.jpg

(C). IM & JL Ge NW FE-HZO GAAFET

圖片5.jpg

(a) The TEM image of detailed structure of Ge JL FE-GAAFET. (b) The enlarged view TEM image of Ge channel and gate stacks(c) ID-VG curves of p-type IM Ge Fe-GAAFET at VD = −0.1 V and −1V. (d) SS vs ID at VD = −0.1 V. (e)The ID–VG curves compare between forward and reverse bias of 5 nm HZO at VD = –0.1 V. (f) The SS–ID curves of the forward and reverse bias of 5 nm HZO.

(D). Ge:HfO2 Ge NW Fe-GAAFET

圖片6.jpg

(a)TEM image of the Ge NW Fe-GAAFET with Ge:HfO2 and (b) HRTEM image of the Ge gate stack. (c) EDS mapping of element distribution (d) ID–VG and IG–VG curves of the Ge NW Fe-GAAFET with Ge:HfO2

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奈米綠能電子元件實驗室   國立清華大學 工程與系統科學系


Nanoelectronic X-FET Green Devices Labortory       

National Tsing Hya University, Department of Engineering and System Science

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